publications

Publications:

1981 - 1991
A. Schenk, ``Zur kinetischen Theorie der strahlungslosen Multi-Phonon-Rekombination", Diplomarbeit (Master thesis), Humboldt-Universität zu Berlin, 1981 (in German).
K. Peuker, A. Schenk, ``Grundlagen der Theorie der strahlungslosen Multi-Phonon-Rekombination", Wiss. Zeitschrift der Humboldt-Universität zu Berlin, Math.-Nat. R. XXXI, 4, 267 - 270, 1982.
K. Peuker, R. Enderlein, A. Schenk, and E. Gutsche, ``Theory of Nonradiative Multiphonon Capture Processes", phys. stat. sol. (b), vol. 109, 599, 1982.
A. Schenk, K. Irmscher, D. Suisky, R. Enderlein, F. Bechstedt, and H. Klose, ``Electric Field Effect on Multiphonon Transitions at Deep Centres", Proc. 17th International Conference on the Physics of Semiconductors (ICPS), San Francisco, USA, 613 - 616, 1985.
A. Schenk, K. Irmscher, D. Suisky, R. Enderlein, F. Bechstedt, and H. Klose, ``Field Dependence of the Emission Rate at Deep Centres in Si and GaAs", Acta Physica Polonica, vol. A 67, 73 - 76, 1985.
A. Schenk, R. Enderlein, and D. Suisky, ``Electroabsorption for Deep Level to Band Transitions Accompanied by Multiphonon Processes", phys. stat. sol. (b), vol. 131, 729 - 739, 1985.
A. Schenk, R. Enderlein, and D. Suisky, ``Electroabsorption at Deep Centres Accompanied by Multiphonon Processes", Acta Physica Polonica, vol. A 69, 795 - 799, 1986.
A. Schenk, R. Enderlein, and D. Suisky, ``Field-dependent Emission Rate at Deep Centres in GaAs by Using a Two Phonon Mode Model", Acta Physica Polonica, vol. A 69, 813 - 816, 1986.
A. Schenk, ``On the Theory of Nonradiative and Radiative Multiphonon Processes at Deep Centers in Strong Electric Fields", Dissertation, Humboldt University Berlin, 1987, (in German).
A. Schenk, D. Suisky, and R. Enderlein, ``Nonradiative Transitions in Semiconductors - A General Formula for an n-Mode Model: The Role of Promoting and Accepting Modes", Acta Physica Polonica, vol. A 71, 315 - 317, 1987.
K. Irmscher, A. Schenk, R. Enderlein, H. Klose, and D. Suisky, ``Electric Field Enhanced Thermal Emission from Charged Deep Levels in Si", Proc. 18th International Conference on the Physics of Semiconductors (ICPS), Stockholm, Sweden, 903 - 906, 1987.
A. Schenk, R. Enderlein, and D. Suisky, ``Determination of Deep Centre Parameters from Electroabsorption Spectra", Acta Physica Polonica, vol. A 73, 303 - 306, 1988.
A. Schenk, R. Enderlein, and D. Suisky, ``Determination of Deep Centre Parameters from Electroabsorption Spectra", Jour. of Luminescence vol. 40+41, 597, 1988.
A. Schenk, R. Enderlein, and D. Suisky, ``Non-radiative Transition Rates: Accepting and Promoting Modes in a n-mode Model", Jour. of Luminescence vol. 40+41, 609, 1988.
A. Schenk, M. Stahl, and H.-J. Wünsche, ``Calculation of Interband Tunneling in Inhomogeneous Fields", phys. stat. sol. (b), vol. 154, 815, 1989.
A. Schenk, M. Stahl, and H.-J. Wünsche, ``Tunneling Current Calculated for Hg_{_0.8}Cd_{_0.2}Te-Diodes", IV. Int. Conf. on II-VI-Compounds, Berlin (West), 1989 and Jour. of Crystal Growth vol. 101, 350, 1990.
A. Schenk, D. Suisky, and R. Enderlein, ``The Interplay of Initial and Final State Field Effects in the Emission Rate of Deep Centres", Acta Physica Polonica, vol. A 77 (2-3), 307 - 310, 1990.
A. Schenk, ``Spatially Variable Drift Mobility Model for Hg_{_1-x}Cd_{_x}Te-Diodes. I. Analytical Base and Fit to Hall Data", phys. stat. sol. (a), vol. 122 (1), 413, 1990.
A. Schenk, ``Spatially Variable Drift Mobility Model for Hg_{_1-x}Cd_{_x}Te-Diodes. II. Application to Device Simulation", phys. stat. sol. (a), vol. 122 (2), 723, 1990.
A. Schenk, ``Spatially Variable (Microscopic) Model of the Drift Mobility for HgCdTe Diodes - Application in TOSCA", Tagung NUMSIM'91, Collected Abstracts and Papers, 23 - 28, Konrad-Zuse-Zentrum Berlin, 5.-8. May 1991.
M. Stahl, A. Schenk, and H.-J. Wünsche, ``2D-Simulation des Interbandtunnelns in inhomogenen elektrischen Feldern", Tagung NUMSIM'91, Collected Abstracts and Papers, 29 - 36, Konrad-Zuse-Zentrum Berlin, 5.-8. May 1991.

1992
R. Enderlein, A. Schenk, "Grundlagen der Halbleiterphysik", Akademie Verlag Berlin 1992, 396 Seiten, 125 Abbildungen
A. Schenk, "An Improved Approach to the Shockley-Read-Hall Recombination in Inhomogeneous Fields of Space-Charge Regions", J. Appl. Phys., vol. 71 (7), 3339-49, 1992.
A. Schenk, "A Model for the Field and Temperature Dependence of Shockley-Read-Hall Lifetimes in Silicon", Solid-State Electronics, vol. 35 (11), 1585-96, 1992.

1993
J. Piprek, A. Schenk, "Deep-Level Delta-Doping of Ti in GaAs - Modelling of Tunnel-Assisted Recombination", J. Appl. Phys., vol. 73 (1), pp. 456-459, 1993.
A. Schenk, "Rigorous Theory and Simplified Model of the Band-to-Band Tunneling in Silicon", Solid-State Electronics, vol. 36 (1), 1993, pp. 19-34.
A. Schenk, U. Krumbein, S. Müller, H. Dettmer, W. Fichtner, "On the Origin of Tunneling Currents in Scaled Silicon Devices", Proc. 1993 International Workshop on VLSI Process and Device Modeling (VPAD), Nara, 1993, p. 96-98.
A. Schenk, S. Müller, "Analytical Model of the Metal-Semiconductor Contact for Device Simulation", Proc. SISDEP'93, vol. 5, pp. 441-45, Wien, September 7-9, Springer-Verlag, 1993.

1994
M. Herrmann, M. Ciappa, A. Schenk, "Long Term Charge Loss in EPROMs with ONO Interpoly Dielectric", Proc. Int. Reliability Physics Symposium, pp. 368-377, San Jose (California), April 11-14, 1994.
A. Schenk, "1D Analytical Model of the Metal-Semiconductor Contact beyond the WKB Approximation", Solid-State Electronics 37 (9), pp. 1633-47, 1994.
A. Schenk, M. Herrmann, "A New Model for the Long Term Charge Loss in EPROMs", Extended abstracts of International Conference on Solid State Devices and Materials, pp. 494-496, Yokohama, Japan, August, 1994.
A. Schenk, U. Krumbein, S. Müller, H. Dettmer, W. Fichtner, "On the Origin of Tunneling Currents in Scaled Silicon Devices", IEICE Transactions on Electronics (Japan), vol. E77-C, pp. 148-154, 1994.

1995
M. Herrmann , A. Schenk, "Field and High-Temperature Dependence of the Long Term Charge Loss in Erasable Programmable Read Only Memories - Measurements and Modeling", J. Appl. Phys., vol. 77 (9), pp. 4522-40, 1995.
U. Krumbein, D. Yoder, A. Benvenuti, A. Schenk, W. Fichtner , "Full-Band Monte Carlo Transport Calculation in an Integrated Simulation Platform", Proc. SISDEP'95, vol. 6, pp. 400-403 , Erlangen, Germany, September 6-8, 1995.
A. Schenk, U. Krumbein, "Coupled Defect-Level Recombination: Theory and Application to Anomalous Diode Characteristics", J. Appl. Phys., vol. 78 (5), pp. 3185-92, 1995.

1996
A. Schenk, "Unified Bulk Mobility Model for Low- and High-Field Transport in Silicon", J. Appl. Phys., vol. 79 (2), pp. 814-34, 1996.
A. Schenk, "Modeling Tunneling through Ultra-Thin Gate Oxides", Proc. First Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), p.7, Tokyo, Japan, September 2-4, 1996.
M. Lades, A. Schenk, U. Krumbein, G. Wachutka, W. Fichtner, "Temperature-Dependent Study of 6H-SiC PiN-Diode Reverse Characteristics", Proc. First Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 55-56, Tokyo, Japan, September 2-4, 1996.
A. Schenk, "Physical Models for Semiconductor Device Simulation", Festkörperprobleme (Advances in Solid State Physics), vol. 36, pp. 245-263.
A. Scholze, A. Wettstein, A. Schenk, W. Fichtner, "Coulomb-Blockade Oscillations - a Total-Energy Approach via Density-Functional Theory", 2nd Hasliberg Workshop on Nanoscience, Hasliberg, Switzerland, October 14-18, 1996.
G. Baccarani, M. Rudan, M. Lorenzini, W. Fichtner, J. Litsios, A. Schenk, P. van Staa, L. Kaeser, A. Kampmann, A. Marmiroli, C. Sala, E. Ravanelli, "Device Simulation for Smart Integrated Systems (DESSIS)", 3rd International Conference on Electronics, Circuits and Systems (IECS'96), Rodos, Greece, October 13-16, 1996.

1997
A. Wettstein, A. Schenk, A. Scholze, G. Garreton, W. Fichtner, "Charge Carrier Quantization Effects in Double-Gated SOI MOSFETs", 6th International Symposium on ULSI Science and Technology, Montreal, Canada, May 4-9, 1997, Meeting Abstracts of Electrochemical Society, 191st Society Meeting, vol. 97 (1), p.616.
A. Schenk, G. Heiser, "Modeling and Simulation of Tunneling through Ultra-Thin Gate Dielectrics", J. Appl. Phys., vol. 81 (12), pp. 7900-08, 1997.
A. Scholze, A. Wettstein, A. Schenk, W. Fichtner, "Self-Consistent Calculations of the Ground State and the Capacitance of a 3D Si/SiO_₂ Quantum Dot", Proc. 5th International Workshop on Computational Electronics (IWCE-5), p. FrP4, 1997, Notre Dame, Indiana, May 28-30.
A. Wettstein, A. Schenk, A. Scholze, and W. Fichtner, "The Influence of Localized States on Gate Tunnel Currents - Modeling and Simulation", Proc. Second Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 101-04, Boston, September 8-10, 1997.

1998
A. Schenk, "Advanced Physical Models for Silicon Device Simulation", (Computational Microelectronics, ed. by S. Selberherr), Springer Wien New York, 1998
H. J. Wen, R. Ludeke, and A. Schenk, "Current oscillations in thin metal-oxide-semiconductor structures observed by ballistic electron emission microscopy", J. Vac. Sc. Tech. B vol. 16 (4), pp. 2296-2301, 1998.
Andreas Schenk, "Finite-Temperature Full Random-Phase Approximation Model of Band Gap Narrowing for Silicon Device Simulation", J. Appl. Phys., vol. 84 (7), pp. 3684-3695, 1998. see also: Technical Report of IIS Nr. 18, 1998
A. Scholze, A. Schenk, and W. Fichtner, "TCAD oriented simulation of single-electron transistors at device level" Proc. Third Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 203-06, Leuven, October 1998.
R. Ludeke, H. J. Wen, and A. Schenk, "Quantum Interference in SiO_₂ and a Conduction Band Mass Reappraisal", Appl. Phys. Lett., vol. 73 (9), pp. 1221-1223, 1998.

1999
A. Schenk, "Re-examination of Physical Models in the Temperature Range 300K - 700K", Technical Report of IIS Nr. 1, 1999
P. P. Altermatt, A. Schenk, G. Heiser, and M. A. Green, ``The influence of a new band gap narrowing model on measurements of the intrinsic carrier density in crystalline silicon'', Technical Digest of the 11th International Photovoltaic Science and Engineering Conference (PVSEC-11), Hokkaido, Japan, pp. 719 -- 722, 1999
Th. Feudel and A. Schenk, "Simulation of the Gate Current Sensitivity of a 1.5nm Gate Oxide nMOST", Technical Report of IIS Nr. 2, 1999
R. Ludeke, E. Cartier, and A. Schenk, "Determination of the energy-dependent conduction band mass in SiO_₂", Appl. Phys. Lett., vol. 75 (10), pp. 1407-1409, 1999.
R. Ludeke and A. Schenk, "Energy-dependent conduction band mass of SiO_₂ determined by ballistic electron emission microscopy", J. Vac. Sc. Tech. B vol. 17 (4), pp. 1823-1830, 1999.
A. Wettstein, A. Schenk, and W. Fichtner, "Simulation of Direct Tunneling through Stacked Gate Dielectrics by a Fully Integrated 1D-Schrödinger-Poisson Solver", Technical Report of IIS Nr. 18, 1999
A. Schenk, "Silicon Bulk Mobility at High Ambient Temperatures", Technical Report of IIS Nr. 22, 1999

2000
A. Wettstein, A. Schenk, and W. Fichtner, "Simulation of Direct Tunneling through Stacked Gate Dielectrics by a Fully Integrated 1D-Schrödinger-Poisson Solver", IEICE Transactions on Electronics (Japan), vol. E83-C (8) , pp. 1189-93, 2000.
A. Scholze, A. Schenk, and W. Fichtner, "Effect of the Tunneling Rates on the Conductance Characteristics of Single-Electron Transistors", IEICE Transactions on Electronics (Japan), vol. E83-C (8) , pp. 1242-46 , 2000.
F. M. Bufler, A. Schenk, and W. Fichtner, "Efficient Monte Carlo Device Modeling", IEEE Trans. Electron Devices, vol. 47(10), pp. 1891-97, Oct. 2000.
F. M. Bufler, A. Schenk, and W. Fichtner, "Efficient Monte Carlo Device Simulation with Automatic Error Control," in Proc. 5th Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD) (Piscataway, NJ: IEEE, 2000), pp. 27-30, Seattle (U.S.A.), Sept. 2000. Abstract.
A. Scholze, A. Schenk, and W. Fichtner, "Single-electron device simulation", IEEE Trans.Electron Devices, vol. 47(10), pp. 1811-18, Oct. 2000.
P. P. Altermatt, J. O. Schumacher, A. Cuevas, S. W. Glunz, R. R. King, G. Heiser, and A. Schenk, "The Extraction of the Surface Recombination Velocity of Si:P Emitters Using Advanced Silicon Models", Proc. 16th European Photovoltaic Solar Energy Conference and Exhibition, Glasgow, 1.-5. May, pp. 102 - 105, 2000.
D. H. Neuhaus, P. P. Altermatt, A. G. Aberle, R. P. Starrett, and A. Schenk, "The Density of States in Heavily Doped Regions of Silicon Solar Cells", Proc. 28th IEEE Photovoltaic Specialists Conference, Anchorage/Alaska, pp. 104 - 107, Sep. 2000.
F. O. Heinz, A. Schenk, and W. Fichtner, "Simulations of Single Electron Effects in SOI Floating Gate MOSFETs", Proc. TNT2000, Toledo, October 2000.
B. Schmithüsen, A. Schenk, and W. Fichtner, "Simulation of Noise in Semiconductor Devices with DESSIS-ISE Using the Direct Impedance Field Method", Technical Report of IIS Nr. 08, 2000.

2001
A. Wettstein, A. Schenk, and W. Fichtner, "Quantum Device-Simulation with the Density-Gradient Model on Unstructured Grids", IEEE Trans.Electron Devices, vol. 48(2), pp. 279-84, Feb. 2001.
A. Schenk, "Physical Modeling of Deep-Submicron Devices", Proc. 31th European Solid-State Device Research Conference (ESSDERC), Nuremberg, Germany, September 11-13, 2001, pp. 9-16.
A. Schenk, "Physical Modeling of Deep-Submicron Devices", Slides of the plenary talk at the 31th ESSDERC, Nuremberg, Germany, September 11-13.
F. M. Bufler, A. Schenk, and W. Fichtner, ``Simplified model for Inelastic Acoustic Phonon Scattering of Holes in Si and Ge", J. Appl. Phys. 90 (5), 2626-28, 2001.
M. Macucci, G. Iannaccone, J. Greer, J. Martorell, D. W. L. Sprung, A. Schenk, I. I. Yakimenko, K.-F. Berggren, K. Stokbro, and N. Gippius "Status and Perspectives of Nanoscale Device Modelling", Nanotechnology, vol. 12, 136-142, 2001.
D. H. Neuhaus, P. P. Altermatt, A. B. Sproul, R. A. Sinton, A. Schenk, A. Wang, and A. G. Aberle, "Method for Measuring Minority and Majority Carrier Mobilities in Solar Cells", 17th European Photovoltaic Solar Energy Conference and Exhibition, Munich/Germany, pp. 1391 - 1395, 22.-26. Oct. 2001.

2002
F. O. Heinz, A. Schenk, and W. Fichtner, ``Conductance of Nano-Scale Silicon-on-Insulator Single Electron Transistors'' Proc. 9th MEL-ARI/NID Workshop, Catania, 6-8 Feb. 2002.
A. Schenk and A. Wettstein, ``2D Analysis of Source-to-Drain Tunneling in Decananometer MOSFETs with the Density Gradient Model", Proc. 5th Int. Conference on Modeling and Simulation of Microsystems, (MSM'02), San Juan Mariott Resort, Puerto Rico, April 21-25, pp. 552-555, 2002.
A. Schenk and A. Wettstein, "Simulation of DGSOI MOSFETs with a Schrödinger-Poisson Based Mobility Model", in Proc. 7th Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 21-24, Kobe (Japan), Sept. 4-6, 2002.
T. Höhr, A. Schenk, A. Wettstein and W. Fichtner, "On Density-Gradient Modeling of Tunneling through Insulators", in Proc. 7th Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 275-278, Kobe (Japan), Sept. 4-6, 2002.
F. M. Bufler, C. Zechner, A. Schenk, and W. Fichtner, "Self-Consistent Single-Particle Simulation", in Proc. 7th Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 159-162, Kobe (Japan), Sept. 4-6, 2002.
F. O. Heinz, A. Schenk, A. Scholze, W. Fichtner, "Full Quantum Simulation of Silicon-on-Insulator Single-Electron Devices", Proc. 8th International Workshop on Computational Electronics (IWCE-8), Urbana, Illinois, Oct 2001. In Journal of Computational Electronics 1, pp. 161-164, 2002.
P. P. Altermatt, J. O. Schumacher, A. Cuevas, M. J. Kerr, S. W. Glunz, R. R. King, G. Heiser, and A. Schenk ``Numerical modeling of highly doped Si:P emitters based on Fermi-Dirac statistics and self-consistent material parameters", J. Appl. Phys. 92 (6), 3187-97, 2002.

2003
P. P. Altermatt, A. Schenk, F. Geelhaar, and G. Heiser, ``Reassessment of the intrinsic carrier density in crystalline silicon in view of band-gap narrowing", J. Appl. Phys. 93 (3), 1598-1603, 2003.
F. M. Bufler, Y. Asahi, H. Yoshimura, C. Zechner, A. Schenk, and W. Fichtner, ``Monte Carlo Simulation and Measurement of Nanoscale n-MOSFETs", IEEE TED 50 (2), 418-424, 2003.
F. M. Bufler, C. Zechner, A. Schenk, and W. Fichtner, ``Single-Particle Approach to Self-Consistent Monte Carlo Device Simulation", IEICE Trans. Electron. E86-C (3), 308-313, 2003.
T. Höhr, A. Schenk, A. Wettstein, and W. Fichtner, ``On Density-Gradient Modeling of Tunneling through Insulators", IEICE Trans. Electron. E86-C (3), 379-384, 2003.
F. M. Bufler, A. Schenk, and W. Fichtner, ``Monte Carlo, Hydrodynamic and Drift-Diffusion Simulation of Scaled Double-Gate MOSFETs", Journal of Computational Electronics 2 (2), 8184, 2003.
F. M. Bufler, A. Schenk, and W. Fichtner, ``Proof of a Simple Time-Step Propagation Scheme for Monte Carlo Simulation", Mathematics and Computers in Simulation 62 (3), 308313, 2003.
A. Schenk and A. Wettstein, ``Simulation of DGSOI MOSFETs with a Schrödinger-Poisson Based Mobility Model", IEICE Trans. Electron. E86-C (3), 385-390, 2003.
A. Schenk, B. Schmithüsen, A. Wettstein, A. Erlebach, S. Brugger, F. M. Bufler, T. Feudel, and W. Fichtner, ``Simulation of RF Noise in MOSFETs Using Different Transport Models", IEICE Trans. Electron. E86-C (3), 481-489, 2003.
F. O. Heinz, A. Schenk, and W. Fichtner, ``Conductance in single electron transistors with quantum confinement", phys. stat. sol. (c) 0 (4), 1309-1312, 2003.

2004
F. M. Bufler, A. Schenk, and W. Fichtner, ``Strained-Si single-gate versus unstrained-Si double-gate MOSFETs", Semicond. Sci. Technol. 19, S122-S124, 2004.
T. Höhr, A. Schenk, and W. Fichtner, ``Revised Shockley-Read-Hall lifetimes for quantum transport modeling", J. Appl. Phys. 95 (9), 4875-4882, 2004.
F. O. Heinz, F. M. Bufler, A. Schenk, and W. Fichtner, ``Quantum transport phenomena and their modeling", Proc. Symposium on Nano Device Technology, Taiwan, 2-8, 2004.
F. O. Heinz, F. M. Bufler, A. Schenk, and W. Fichtner, ``Quantum transport phenomena and their modeling", Presentation at Symposium on Nano Device Technology, Taiwan, May 2004.
F. M. Bufler, A. Schenk, and W. Fichtner, ``Scalability of FinFETs and Unstrained-Si/Strained-Si FDSOI-MOSFETs", Proc. 9th Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 195-198 , München, Sept. 2-4, 2004.
A. Schenk, ``A Local Mobility Model for Ultra-Thin DGSOI nMOSFETs", Proc. 9th Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 113-116, München, Sept. 2-4, 2004.
A. Schenk, ``Modeling and Simulation of SOI Devices", Short Course, IEEE Int. SOI Conf., Charleston, USA, October 4, 2004.
B. Schmithüsen, A. Schenk, I. Ruiz, and W. Fichtner, ``Simulation of Physical Semiconductor Devices under Large and Small Signal Conditions", Asian-Pacific Microwave Conf., New Delhi, India, December 15 - 18, 2004. ___Slides of invited talk
A. Erlebach, Th. Feudel, A. Schenk, and Ch. Zechner, ``Influence of Halo and Drain-Extension Doping Gradients on Transistor Performance'', Materials Science and Engineering B, Volumes 114-115, 15-19, 2004.

2005
B. Polsky, O. Penzin, K. E. Sayed, A. Schenk, A. Wettstein, and W. Fichtner, ``On Negative Differential Resistance in Hydrodynamic Simulation of Partially Depleted SOI Transistors", IEEE TED 52 (4), 500-506, 2005.
P. P. Altermatt, A. Schenk, B. Schmithüsen, and G. Heiser, "Impact of incomplete ionisation on measurements of sheet resistivity and of carrier mobility in c-Si solar cells at room temperature", Proc. 20th European Photovoltaic Conference, Barcelona, pp. 1267-1270, June 2005.
S. C. Brugger and A. Schenk, "First-Principle Computation of Relaxation Times in Semiconductors for Low and High Electric Fields", Proc. 10th Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo (Japan), Sept. 1-3, pp. 151-154, 2005.
F. M. Bufler and A. Schenk, "On the Tunneling Energy within the Full-Band Structure Approach", Proc. 10th Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo (Japan), Sept. 1-3, pp. 155-158, 2005
A. Schenk, F. O. Heinz, and B. Schmithüsen, "DGSOI versus Bulk: A Quantum-Ballistic Study of 25 nm nMOSFETs", Proc. 10th Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo (Japan), Sept. 1-3, pp. 47-50, 2005.

2006
S. C. Brugger, A. Schenk, and W. Fichtner, ``Moments of the Inverse Scattering Operator of the Boltzmann Equation: Theory and Applications", SIAM Journal of Applied Mathematics SIAP 66 (4), 1209-1226, 2006.
M. Luisier, A. Schenk, W. Fichtner, and G. Klimeck, ''Transport Calculation of Semiconductor Nanowires Coupled to Quantum Well Reservoirs", J. Comput. Electron. 6, 199-202, 2007 and Proc. 11th International Workshop on Computational Electronics (IWCE-11), Vienna, Austria, May 25-27, pp. 267 - 268, 2006.
S. C. Brugger and A. Schenk, ''New One-Particle Monte Carlo Method for Nanoscale Device Simulation", Proc. 9th annual NSTI Nanotechnology Conference and Trade Show, Boston, Massachusetts, May 7-11, 2006.
O. Breitenstein, P. Altermatt, K. Ramspeck, M. A. Green, J. Zhao, A. Schenk, ''Interpretation of the Commonly Observed I-V Characteristics of C-Si Cells Having Ideality Factor Larger than Two", 4th World Conference on Photovoltaic Energy Conversion (WCPEC 2006), Hilton Waikoloa, Hawai, May 7-12, 2006, pp. 625 -- 628.
O. Breitenstein, P. Altermatt, K. Ramspeck, A. Schenk, ''The Origin of Ideality Factors N>2 of Shunts and Surfaces in the Dark I-V Curves of Si Solar Cells", 21th European Photovoltaic Solar Energy Conference and Exhibition, Exhibition and Convention Centre, Dresden, Germany, Sep 4-8, 2006, pp. 1471 -- 1474.
M. Luisier, A. Schenk, and W. Fichtner, ''Quantum transport in two- and three-dimensional nanoscale transistors: Coupled mode effects in the nonequilibrium Green's function formalism", J. Appl. Phys., vol. 100 (4), 043713, 2006.
G. Klimeck, M. Luisier, T. B. Boykin, N. Kharche, and A. Schenk, ''A study of alloyed nanowires from two perspectives: approximate dispersion and transmission", Proc. 28th International Conference on the Physics of Semiconductors (ICPS), Vienna, Austria, July 24-28, pp. 711 - 712, 2006.
A. Schenk, P. P. Altermatt, and B. Schmithüsen, "Physical Model of Incomplete Ionization for Silicon Device Simulation", Proc. 11th Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey CA (USA), Sept. 6-8, 2006.
F. O. Heinz and A. Schenk, "Self-consistent modeling of longitudinal quantum effects in nanoscale double-gate metal oxide semiconductor field effect transistors", J. Appl. Phys. vol. 100 (8), 084314, 2006.
P. P. Altermatt, A. Schenk, and G. Heiser, "A simulation model for the density of states and for incomplete ionization in crystalline silicon. I. Establishing the model in Si:P", J. Appl. Phys. vol. 100 (11), 113714, 2006.
P. P. Altermatt, A. Schenk, B. Schmithüsen, and G. Heiser, "A simulation model for the density of states and for incomplete ionization in crystalline silicon. II. Investigation of Si:As and Si:B and usage in device simulation", J. Appl. Phys. vol. 100 (11), 113715, 2006.
M. Luisier, A. Schenk, and W. Fichtner, "Three-Dimensional Full-Band Simulations of Si Nanowire Transistors", IEDM Tech. Digest, pp. 811 - 814, 2006.
M. Luisier, A. Schenk, and W. Fichtner, "Atomistic simulation of nanowires in the sp³d⁵s^* tight-binding formalism: From boundary conditions to strain calculations", Phys. Rev. B 74, 205323, 2006.

2007
T. B. Boykin, M. Luisier, A. Schenk, N. Kharche, and G. Klimeck, "The Electronic Structure and Transmission Characteristics of Disordered AlGaAs Nanowires", IEEE-TNANO 6 (1), 43 - 47, 2007.
M. Luisier, A. Schenk, and W. Fichtner, "Atomistic treatment of interface roughness in Si nanowire transistors with different channel orientations", Appl. Phys. Lett. 90 (10), 102103, 2007.
S. C. Brugger and A. Schenk, ''On the Interpretation of Local Negative Mobilities in Nanoscale Semiconductor Devices", IEEE TED 54 (7), 1766-1770, 2007.
S. C. Brugger, A. Wirthmueller, and A. Schenk, ''Quantum Correction for the Current-Based One-Particle Monte-Carlo Method", Proc. 10th annual NSTI Nanotechnology Conference and Trade Show, Santa Clara, California, May 20-24, 2007.
S. C. Brugger, V. Peikert, and A. Schenk, ''An Exact Explicit Method to Solve the Space-Homogeneous Boltzmann Equation to any Order in the Electric and Magnetic Field", 15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS15), Tokyo, Japan, July 23-27, 2007.
C. Fiegna, S. C. Brugger, F. M. Bufler, P. Dollfus, V. Aubry-Fortuna, C. Jungemann, B. Meinerzhagen, P. Palestri, S. Galdin-Retailleau, E. Sangiorgi, A. Schenk, and L. Selmi, ``Comparison of Monte Carlo transport models for nanometer-size MOSFETs'', Proc. 12th Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD) Vienna, Austria, Sep. 25 -27 2007.
M. Luisier, A. Schenk, and W. Fichtner, ``Full-band atomistic study of source-to-drain tunneling in Si nanowire transistors'', Proc. 12th Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD) Vienna, Austria, Sep. 25 -27 2007.
S. C. Brugger and A. Schenk, ``Universal Method for Extracting Transport Parameters from Monte Carlo Device Simulation'', IEEE Trans. Electron Devices 54 (11), 3092-3096, 2007.
M. Luisier, A. Schenk, and W. Fichtner, ``Three-dimensional Modeling of Gate Leakage in Si Nanowire Transistors'', IEDM Tech. Digest, p. 733 - 736, December 2007.
A. Esposito, M. Luisier, M. Frey, and A. Schenk, ``A Nonparabolicity Model Compared to Tight-Binding: The Case of Square Silicon Quantum Wires'', ISDRS, College Park, Maryland, USA, December 12-14, 2007.

2008
S. C. Brugger, V. Peikert, and A. Schenk, "Exact method to solve the Boltzmann equation to any order in the driving forces: Application to transport parameters", phys. stat. sol. (c) 5 (1), 86-89, 2008.
M. Luisier and A. Schenk, ``Atomistic Simulation of Nanowire Transistors'', Journal of Computational and Theoretical Nanoscience Vol. 5 (6), 1031 - 1045, 2008.
M. Luisier and A. Schenk, ``Two-Dimensional Tunneling Effects on the Leakage Current of MOSFETs With Single Dielectric and High- $kappa$ Gate Stacks'', IEEE Trans. Electron Devices 55 (6), 1494-1501, 2008.
A. Schenk and M. Luisier, "Three-dimensional Quantum Simulation of Silicon Nanowires", Proc. 2008 IEEE Silicon Nanoelectronics Workshop (SNW), Hilton Hawaiian Village, Honolulu, HI, p. M1050, 15 - 17 June 2008. ___Slides of invited talk
S. Monaghan, P. K. Hurley, K. Cherkaoui, M. A. Negara, and A. Schenk, "Determination of Physical Parameters for HfO2/SiOx/TiN MOSFET Gate Stacks by Electrical Characterization and Reverse Modeling", 9th Conf. on Ultimate Integration on Silicon, ULIS'2008, Udine, Italy, 12 - 14 March 2008.
M. Luisier, A. Schenk, W. Fichtner, T. B. Boykin, and G. Klimeck, "A parallel sparse linear solver for nearest-neighbor tight-binding problems", 14th Int. Conf. on Parallel and Distributed Computing, August 26 - 29, 2008, Las Palmas de Gran Canaria, Spain.
A. Schenk, M. Luisier, M. Frey, and A. Esposito, "Simulation of Quantum Effects in Nanoscale Devices", 3rd SINANO Summer School, Bertinoro, Italy, 1 - 5 September 2008.
A. Schenk and M. Luisier, "2D Simulation of Gate Currents in MOSFETs: Comparison between S-Device and the Quantum Mechanical Simulator GreenSolver", Proc. 13th Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD) Hakone, Japan, Sep. 9 - 11, 2008, pp. 7-7-1 - 7-7-4.
A. Esposito and A. Schenk, "Limitiations of the Effective Mass Approximation: A Specific Example", Colloque Numérique Suisse (Schweizer Numerik Kolloquium), Université de Fribourg, Campus Pérolles, April 25, 2008, http://www.math.ch/colloqnum08/
S. C. Brugger, V. Peikert, and A. Schenk, "Coupling the Monte-Carlo Method with Semi-Analytical Solutions of the Boltzmann Transport Equation", Proc. 13th Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD) Hakone, Japan, Sep. 9 - 11, 2008, pp. 7-6-1 - 7-6-4.
M. Frey, A. Esposito, and A. Schenk, "Simulation of intravalley acoustic phonon scattering in silicon nanowires", Proc 38th European Solid-State Device Research Conference (ESSDERC), Edinburgh, UK, September 15-19, 2008, pp.258 - 261.

2009
A. Schenk, "GIDL Suppression by Optimization of Junction Profiles in 22nm DGSOI nFETs", Proc. Fifth Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits (EUROSOI), Chalmers Göteborg, Sweden, Jan. 19 - 21, pp. 31 - 32, 2009.
S. Monaghan, P. K. Hurley, K. Cherkaoui, M. A. Negara, and A. Schenk, ``Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures'', Solid-State Electronics 53 (4), 438 - 444, 2009. (personal pre-print version, final version only available from SSE)
A. Esposito, M. Luisier, M. Frey, and A. Schenk, "A nonparabolicity model compared to tight-binding: The case of square silicon quantum wires", Solid-State Electronics 53 (3), 376 - 382, 2009. (personal pre-print version, final version only available from SSE)
P. Palestri, C. Alexander, A. Asenov, G. Baccarani, A. Bournel, M. Braccioli, B. Cheng, P. Dollfus, A. Esposito, D. Esseni, A. Ghetti, C. Fiegna, G. Fiori, V. Aubry-Fortuna, G. Iannaccone, A. Martinez, B. Majkusiak, S. Monfray, S. Reggiani, C. Riddet, J. Saint-Martin, E. Sangiorgi, A. Schenk, L. Selmi, L. Silvestri, J. Walczak, "Comparison of Advanced Transport Models for Nanoscale nMOSFETs", Proc. 10th Conf. on Ultimate Integration on Silicon, ULIS'2009, Aachen, Germany, 18 - 20 March, pp. 125 - 128, 2009.
A. Esposito, M. Frey, and A. Schenk, "Improvement of the Effective Mass Approximation for Silicon Nanowires", Colloque Num�rique Suisse (Schweizer Numerik Kolloquium), University of Basel, April 24, 2009, http://www.colloqnum09.unibas.ch/
V. Peikert and A. Schenk, "A First Analysis of a New Fixed Point Iteration of the Boltzmann Equation: Application to TCAD", 2009 Ph.D. Research in Microelectronics and Electronics (PRIME), Cork, Ireland, 12 - 17 July, 2009, Proceedings pp. 148 - 151.
M. Frey, A. Esposito, and A. Schenk, ''Boundary Conditions for Incoherent Quantum Transport", Proc. 13th International Workshop on Computational Electronics (IWCE-13), Beijing, China, May 27-29, pp. 17 - 20, 2009.
P. P. Altermatt, Y. Yang, , T. Langer, A. Schenk, R. Brendel, ``Simulation of optical properties of Si wire cells'', Proc. 34th IEEE Photovoltqaic Specialists Conference, Philadelphia, PA, June 7-12, pp. 000972 - 000977, 2009.
A. Heigl, A. Schenk, and G. Wachutka, ''Correction to the Schenk Model of Band-to-Band Tunneling in Silicon Applied to the Simulation of Nanowire Tunneling Transistors", Proc. 13th International Workshop on Computational Electronics (IWCE-13), Beijing, China, May 27-29, pp. 267 - 268, 2009.
A. Esposito, M. Frey, and A. Schenk, ''Quantum transport including nonparabolicity and phonon scattering: application to silicon nanowires", Journal of Computational Electronics 8 (3), 336-348 (2009), SpringerLink: 10.1007/s10825-009-0276-0.
Andreas Schenk, "Scalability Study of Floating Body Memory Cells", Proc. 14th Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD) San Diego, USA, Sep. 9 - 11, 2009, pp. 31 - 34.
P. Palestri, C. Alexander, A. Asenov, V. Aubry-Fortuna, G. Baccarani, A. Bournel, M. Braccioli, B. Cheng, P. Dollfus, A. Esposito, D. Esseni, C. Fenouillet-Beranger, C. Fiegna, G. Fiori, A. Ghetti, G. Iannaccone, A. Martinez, B. Majkusiak, S. Monfray, V. Peikert, S. Reggiani, C. Riddet, J. Saint-Martin, E. Sangiorgi, A. Schenk, L. Selmi, L. Silvestri, P. Toniutti, J. Walczak, "A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs", Solid-State Electronics 53, pp. 1293 - 1302, 2009 (personal pre-print version, final version only available from SSE), doi.org/10.1016/j.sse.2009.09.019.

2010
Andreas Schenk, "Suppression of gate-induced drain leakage by optimization of junction profiles in 22 nm and 32 nm SOI nFETs", Solid-State Electronics 54, pp. 115 - 122, 2010 (personal pre-print version, final version only available from SSE), doi:10.1016/j.sse.2009.12.005.
B. Majkusiak, P. Palestri, A. Schenk, A. Spinelli, C. Monzio Compagnoni, M. Luisier, ``Modeling and simulation approaches for gate current computation'', book chapter in ``Silicon-Based Nanodevices (SINANO)'', ed. F. Balestra, Wiley-ISTE, ISBN: 978-1-84821-180-3, June 2010.

2011
M. Frey, A. Esposito, and A. Schenk,``Computational comparison of conductivity and mobility models for silicon nanowire devices'', J. Appl. Phys. vol. 109 (8), 083707, 2011, doi:10.1063/1.3573487.
S. Steingrube, O. Breitenstein, K. Ramspeck, S. Glunz, A. Schenk, and P. P. Altermatt,``Explanation of commonly observed shunt currents in c-Si solar cells by means of recombination statistics beyond the Shockley-Read-Hall approximation'', J. Appl. Phys. vol. 110 (1), 014515, 2011, doi:10.1063/1.3607310.
A. Schenk, R. Rhyner, M. Luisier, and C. Bessire, "Analysis of Si, InAs, and Si-InAs Tunnel Diodes and Tunnel FETs Using Different Transport Models", Proc. 17th Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan, Sep. 8 - 10, 2011, pp. 263 - 266.
Reto Rhyner, Cedric Bessire, Luca De Michielis, Arnab Biswas, Andreas Schenk, Heike Riel, Adrian M. Ionescu, "Enabling energy efficient tunnel FET-CMOS co-design by compact modeling and simulation", Nano-Tera Annual Meeting Bern, Switzerland, May 12 - 13, 2011.
V. Peikert and A. Schenk, "A Wavelet Method to Solve High-dimensional Transport Equations in Semiconductor Devices", Proc. 17th Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan, Sep. 8 - 10, 2011, pp. 299 - 302.
Cedric D. Bessire, Mikael T. Björk, Heinz Schmid, Andreas Schenk, Kathleen B. Reuter, and Heike Riel, "Trap-Assisted Tunneling in Si-InAs Nanowire Heterojunction Tunnel Diodes", Nano Lett. 11 (10), 4195 - 4199, 2011. doi:10.1021/nl202103a
Denis Dolgos, Hektor Meier, Andreas Schenk, and Bernd Witzigmann, "Full-band Monte Carlo simulation of high-energy carrier transport in single photon avalanche diodes: Computation of breakdown probability, time to avalanche breakdown, and jitter", J. Appl. Phys. vol. 110, 084507, 2011, doi:10.1063/1.3652844.

2012
Heinz Schmid, Cedric Bessire, Mikael T. Björk, Andreas Schenk, and Heike Riel, "Silicon Nanowire Esaki Diodes", Nano Lett. 12 (2), 699 - 703, 2012. doi:10.1021/nl2035964.
Denis Dolgos, Andreas Schenk, and Bernd Witzigmann, "Impact ionization scattering model based on the random-k approximation for GaAs, InP, InAlAs, and InGaAs", J. Appl. Phys. vol. 111, 073714, 2012, doi:10.1063/1.3699313.
Denis Dolgos, Hektor Meier, Andreas Schenk, and Bernd Witzigmann, "Full-band Monte Carlo simulation of high-energy carrier transport in single photon avalanche diodes with multiplication layers made of InP, InAlAs, and GaAs", J. Appl. Phys. vol. 111, 104508, 2012, doi:10.1063/1.4717729.
V. Peikert and A. Schenk, ''A High Polynomial-Order Wavelet Method for Semiconductor Transport Equations", Proc. 15th International Workshop on Computational Electronics (IWCE-15), University of Wisconsin, Madison, May 22-25, pp. 35 - 36, 2012.
H. Schmid, M. T. Björk, C. D. Bessire, H. Ghoneim, P. Mensch, R. Rhyner, A. Schenk, Ch. Rettner, S. Karg, K. E. Moselund and H. Riel, "Growth, n-type doping, and electrical characterization of InAs nanowires", 6th Nanowire Growth Workshop St. Petersburg, Russia, June 4-6, 2012, Academic University Publishing, p. 27
Andreas Schenk, Reto Rhyner, Mathieu Luisier, and Cedric Bessire, "Simulation Study of Nanowire Tunnel FETs", Invited talk at 70th Device Research Conference (DRC), June 18-20, pp. 201-202, 2012.
Cedric Bessire, Heinz Schmid, Mikael T. Björk, Andreas Schenk, Kirsten E. Moselund, Hesham Ghoneim, Heike Riel, "Si-InAs Nanowire Tunnel Diodes", 31st Int. Conf. on the Physics of Semiconductors ICPS, Zurich, Switzerland, July 29 - August 3, 2012.
Reto Rhyner, Mathieu Luisier, and Andreas Schenk, "Atomistic Simulation of Phonon-Assisted Tunneling in Bulk-like Esaki Diodes", Proc. 18th Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, USA, Sep. 5 - 7, 2012, pp. 55 - 58.
H. Ghoneim, P. Mensch, H. Schmid, C. D. Bessire, R. Rhyner, A. Schenk, Ch. Rettner, S. Karg, K. E. Moselund, H. Riel, and M. T. Björk, "In situ doping of calalyst-free InAs nanowires", Nanotechnology 23, 505708, 2012, http://dx.doi.org/10.1088/0957-4484/23/50/505708
H. Riel, K. E. Moselund, C. Bessire, M. T. Björk, A. Schenk, H. Ghoneim, H. Schmid, "InAs-Si Heterojunction Nanowire Tunnel Diodes and Tunnel FETs", IEDM Tech. Digest pp. 391 - 394, 2012.

2013
A. Schenk and A. Scheinemann, "Modeling of Leakage Currents in Ultra Shallow Junctions", E-MRS, Symposium K, Strasbourg, France, May 27 - 31, 2013. ___Slides of invited talk
K. E. Moselund, H. Schmid, C. Bessire, M. Borg, M. Björk, P. Das Kanungo, A. Schenk, V. Schmidt, M. Richter, and H. Riel, "Fabrication and electrical characterization of III-V heterostructure nanowire tunnel devices on silicon", E-MRS, Symposium P, Strasbourg, France, May 27 - 31, 2013 (invited).
A. Scheinemann and A. Schenk, "Defect Analysis with TCAD-based DLTS Simulation", Proc. 16th International Workshop on Computational Electronics (IWCE-16), Nara, Japan, pp. 130 - 131, June 4 - 7, 2013.
D. Dolgos, H. Meier, A. Schenk, and B. Witzigmann, "Full-band Monte Carlo simulation of single photon avalanche diodes", IEEE Photonics Conference (IPC), Bellevue, USA, September 8 - 12, 2013 (invited).

2014
A. Scheinemann and A. Schenk, "TCAD-based DLTS simulation for analysis of extended defects", Phys. Status Solidi A 211, No. 1, pp. 136-142, 2014, DOI 10.1002/pssa.201300233.
Saurabh Sant, Qing-Tai Zhao, Dan Buca, Siegfried Mantl, and Andreas Schenk, "Analysis of GeSn-SiGeSn Hetero-Tunnel FETs" Proc. 20th Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan, Sep. 9 - 11, 2014, pp. 125 - 128.
Hamilton Carrillo-Nuñez, Mathieu Luisier, and Andreas Schenk, "Analysis of InAs-Si Heterojunction Nanowire Tunnel FETs: Extreme Confinement vs. Bulk" Proc. 44th European Solid-State Device Research Conference (ESSDERC), Venice, Italy, September 22-26, 2014, pp.118 - 121.
Saurabh Sant and Andreas Schenk, "Pseudopotential calculations of strained-GeSn/SiGeSn hetero-structures", Appl. Phys. Lett. vol. 105 (16), p. 162101, 2014, DOI 10.1063/1.4898676.

2015
S. Sant and A. Schenk, "Band-Offset Engineering for GeSn-SiGeSn Hetero Tunnel FETs and the Role of Strain", Journal of the Electron Device Society vol. 3 (3), pp. 164-175, 2015, DOI Digital 10.1109/JEDS.2015.2390971.
A. Schenk, S. Sant, K. Moselund, and H. Riel, "Comparative Simulation Study of InAs/Si and All-III-V Hetero Tunnel FETs", ECS Transactions vol. 66 (5), pp. 157-169, 2015.
H. Carrillo-Nuñez, M. Luisier, and A. Schenk, "Analysis of InAs-Si Heterojunction Nanowire Tunnel FETs: Extreme Confinement vs. Bulk", Solid-State Electronics 113, pp. 61 - 67, 2015 (personal pre-print version, final version only available from SSE), doi:10.1016/j.sse.2015.05.019.
Petr A. Khomyakov, Mathieu Luisier, and Andreas Schenk, "Compositional bowing of band energies and their deformation potentials in strained InGaAs ternary alloys: a first-principles study", Appl. Phys. Lett. vol. 107 (6), p. 062104, 2015, DOI 10.1063/1.4928539.
H. Carrillo-Nuñez, M. Luisier, A. Ziegler, and A. Schenk, "Modeling direct band-to-band tunneling: From bulk to quantum-confined semiconductor devices", J. Appl. Phys. vol. 117, 234501, 2015, doi:10.1063/1.4922427.
H. Carrillo-Nuñez, M. Luisier, and A. Schenk, "Analysis of InAs-Si Heterojunction Double-Gate Tunnel FETs with Vertical Tunneling Paths", Proc. 45th European Solid-State Device Research Conference (ESSDERC), Graz, Austria, September 15-18, 2015, pp. 302 - 305.
C. Nyamhere, A. Scheinemann, A. Schenk, A. Scheit, F. Olivie, and F. Cristiano, "A comprehensive study of the impact of dislocation loops on leakage currents in Si shallow junction devices", J. Appl. Phys. vol. 118, 184501, 2015, doi.org/10.1063/1.4935293.
H. Carrillo-Nuñez, M. Luisier, and A. Schenk, "InAs-GaSb/Si Heterojunction Tunnel MOSFETs: An Alternative to TFETs as Energy-Efficient Switches?", IEDM Tech. Digest pp. 895 - 898 (2015).

2016
S. Sant and A. Schenk, "Methods to Enhance the Performance of InGaAs/InP Heterojunction Tunnel FETs'', IEEE Trans. Electron Devices 63 (5), 2169 - 2175, 2016, doi: 10.1109/TED.2015.2489844.
George Zerveas, Enrico Caruso, Giorgio Baccarani, Lukas Czornomaz, Nicolas Daix, David Esseni, Elena Gnani, Antonio Gnudi, Roberto Grassi, Mathieu Luisier, Troels Markussen, Patrik Osgnach, Pierpaolo Palestri, Andreas Schenk, Luca Selmi, Marilyne Sousa, Kurt Stokbro, and Michele Visciarelli, "Comparison of modeling approaches for band-structure calculation in III-V semiconductor quantum wells", Solid-State Electronics 116, pp. 92 - 102, 2016, doi:10.1016/j.sse.2015.09.005.
A. Schenk, S. Sant, K. Moselund, and H. Riel, "III-V-based Hetero Tunnel FETs: A Simulation Study with Focus on Non-ideality Effects" (Invited), 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon January 25-27, 2016, Vienna, Austria
K. Moselund, D. Cutaia, M. Borg, H. Schmid, S. Sant, A. Schenk, and H. Riel, "InAs/Si heterojunction nanowire tunnel FETs monolithically integrated on silicon" (Invited), ICONN 2016 - Int. Conf. on Nanoscience and Nanotechnology, National Convention Centre, Canberra, Australia, Feb 7-11, 2016, Slides of invited talk
S. Sant, A. Schenk, K. Moselund, and H. Riel, "Impact of Trap-assisted Tunneling and Channel Quantization on InAs/Si Hetero Tunnel FETs", 74th Device Research Conference (DRC), Delaware, June 19-22, pp. 67-68, 2016.
K. Moselund, D. Cutaia, M. Borg, H. Schmid, S. Sant, A. Schenk, and H. Riel, "Integration of III-V heterostructuretunnel FETs on Si using Template Assisted Selective Epitaxy(TASE)" (Invited), Compound Semiconductor Week(CSW-IPRM), Toyama International Conference Center, Toyama, Japan, Jun 26-30, 2016, Slides of invited talk
Kantawong Vuttivorakulchai, Mathieu Luisier, and Andreas Schenk, "Modeling the Thermal Conductivity of Si Nanowires with Surface Roughness", Proc. 22th Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), Nuremberg, Germany, Sep. 6 - 8, 2016, pp. 19 - 22.
P. Aguirre, H. Carrillo-Nuñez, A. Ziegler, M. Luisier, and A. Schenk, "Drift-Diffusion Quantum Corrections for In_{_0.53}Ga_{_0.47}As Double Gate Ultra-Thin-Body FETs", Proc. 22th Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), Nuremberg, Germany, Sep. 6 - 8, 2016, pp. 53 - 26.
Saurabh Sant, Hamilton Carrillo-Nuñez, Mathieu Luisier, and Andreas Schenk, "Transfer Matrix Based Semiclassical Model for Field-induced and Geometrical Quantum Confinement in Tunnel FETs", Proc. 22th Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), Nuremberg, Germany, Sep. 6 - 8, 2016, pp. 77 - 80.
K. E. Moselund, D. Cutaia, H. Schmid, H. Riel, S. Sant, and A. Schenk, "Complementary III-V heterostructure Tunnel FETs (invited)", Proc. 46th European Solid-State Device Research Conference (ESSDERC), Lausanne, Switzerland, Sep. 12-15, 2016, pp. 403 - 407.
Hamilton Carrillo-Nuñez, Reto Rhyner, Mathieu Luisier, and Andreas Schenk, "Effect of Surface Roughness and Phonon Scattering on Extremely Narrow InAs-Si Nanowire TFETs", Proc. 46th European Solid-State Device Research Conference (ESSDERC), Lausanne, Switzerland, Sep. 12-15, 2016, pp. 188 - 191.
Martin Rau, Troels Markussen, Enrico Caruso, David Esseni, Elena Gnani, Antonio Gnudi, Petr A. Khomyakov, Mathieu Luisier, Patrik Osgnach, Pierpaolo Palestri, Susanna Reggiani, Andreas Schenk, Luca Selmi, and Kurt Stokbro, "Performance Study of Strained III-V Materials for Ultra-Thin Body Transistor Applications", Proc. 46th European Solid-State Device Research Conference (ESSDERC), Lausanne, Switzerland, Sep. 12-15, 2016, pp. 184 - 187.
K. E. Moselund, D. Cutaia, H. Schmid, M. Borg, S. Sant, A. Schenk, and H. Riel, "III-V heterojunction nanowire tunnel FETs monolitically integrated on silicon", 11th IEEE Nanotechnology Materials and Devices Conference (NMDC), Toulouse, France, Oct 9-12, pp. , 2016
K. E. Moselund, D. Cutaia, H. Schmid, M. Borg, S. Sant, A. Schenk, and H. Riel, "Lateral InAs/Si p-Type Tunnel FETs Integrated on Si - Part 1: Experimental Devices", IEEE Trans. Electron Devices 63 (11), 4233 - 4239, 2016, doi: 10.1109/TED.2016.2606762.
S. Sant, K. E. Moselund, D. Cutaia, H. Schmid, M. Borg, H. Riel, and A. Schenk, "Lateral InAs/Si p-Type Tunnel FETs Integrated on Si - Part 2: Simulation Study of the Impact of Interface Traps", IEEE Trans. Electron Devices 63 (11), 4240 - 4247, 2016, doi: 10.1109/TED.2016.2612484.
H. Carrillo-Nuñez, Ch. Stieger, M. Luisier, and A. Schenk, "Performance predictions of single-layer In-V double-gate n- and p-type field-effect transistors", IEDM Tech. Digest pp. 368 - 371 (2016).
M. Rau, E. Caruso, D. Lizzit, P. Palestri, D. Esseni, A. Schenk, L. Selmi, and M. Luisier, "Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next- Generation Technology Nodes", IEDM Tech. Digest pp. 758 - 761 (2016).
Hamilton Carrillo-Nuñez, Mathieu Luisier, and Andreas Schenk, "Design of High-Performance InAs-Si Heterojunction 2D-2D Tunnel FETs With Lateral and Vertical Tunneling Paths", IEEE Trans. Electron Devices 63 (12), 5041 - 5047, 2016, doi: 10.1109/TED.2016.2612484.

2017
Saurabh Sant and Andreas Schenk, "Modeling the Effect of Interface Roughness on the Performance of Tunnel FETs", IEEE Electron Device Letters 6 (1), 258 - 261, 2017, DOI 10.1109/LED.2016.2636658.
Andreas Schenk, Saurabh Sant, Kirsten Moselund, and Heike Riel, "How Non-ideality Effects Deteriorate the Performance of Tunnel FETs", Proc. 1st IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Toyama, Japan, Feb 29 - Mar 2, 2017, pp. 126 - 127.
G. Signorello, S. Sant, N. Bologna, M. Schraff, U. Drechsler, H. Schmid, S. Wirths, M. D. Rossell, A. Schenk, and H. Riel, "Manipulating Surface States of III-V Nanowires with Uniaxial Stress", Nano Lett. 17, 2816 - 2824, 2017. doi:10.1021/acs.nanolett.6b05098.
Andreas Schenk, Saurabh Sant, Kirsten Moselund, and Heike Riel, "The Impact of Hetero-junction and Oxide-interface Traps on the Performance of InAs/Si Tunnel FETs", Proc. IEEE Int. Workshop on Junction Technology (IWJT), Kyoto, Japan, Jun 01 - 02, 2017, pp. 27 - 30.
E. Memisevic, M. Hellenbrand, E. Lind, A. R. Persson, S. Sant, A. Schenk, J. Svensson, R. Wallenberg, and L.-E. Wernersson, "Individual defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect-Transistors operating below 60-mV/decade", Nano Lett. 17, pp. 4373 - 4380 , 2017, doi:10.1021/acs.nanolett.7b01455
A. Schenk, S. Sant, K. Moselund, H. Riel, E. Memisevic, and L.-E. Wernersson, "The Impact of Hetero-junction and Oxide-interface Traps on the Performance of InAs/Si and InAs/GaAsSb Nanowire Tunnel FETs", Proc. 23th Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan, Sep. 7 - 9, 2017, pp. 273 - 276.
S. Sant, M. Luisier, and A. Schenk, "DFT-based Analysis of the Origin of Traps at the InAs/Si (111) Interface", Proc. 23th Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan, Sep. 7 - 9, 2017, pp. 17 - 20.
Saurabh Sant and Andreas Schenk, "Modeling the Effect of Surface Roughness on the Performance of Line Tunnel FETs", Proc. 47th European Solid-State Device Research Conference (ESSDERC), Leuven, Belgium, Sep. 07-11, 2017, pp. 50 - 53.
Saurabh Sant and Andreas Schenk, "Trap-tolerant Device Geometry for InAs/Si pTFETs", IEEE Electron Device Letters 38 (10), 1363 - 1366, 2017, DOI:10.1109/LED.2017.2740262.
S. Sant and A. Schenk, "The effect of density-of-state tails on band-to-band tunneling: Theory and application to tunnel field effect transistors", J. Appl. Phys. vol. 122, 135702, 2017, doi:org/10.1063/1.4994112.
S. Sant, M. Luisier, and A. Schenk, "Density functional theory based analysis of the origin of traps at the InAs/Si heterointerface", Appl. Phys. Lett. vol. 111, 242102, 2017, doi:org/10.1063/1.5003314.
H. Hahn, V. Deshpande, E. Caruso, S. Sant, E. O'Connor, Y. Baumgartner, M. Sousa, D. Caimi, A. Olziersky, P. Palestri, L. Selmi, A. Schenk, and L. Czornomaz, "A Scaled Replacement Metal Gate InGaAs-on- Insulator n-FinFET on Si with Record Performance", IEDM Tech. Digest pp. 425 - 428 (2017).

2018
S. Sant, E. Memisevic, L.-E. Wernersson, and A. Schenk, "Impact of Non-idealities on the Performance of InAs/(In)GaAsSb/GaSb Tunnel FETs", ISTE OpenScience, Published by ISTE Science Publishing, London, UK, openscience.fr, 2018, pp. 1 - 10.
P. Aguirre and A. Schenk, "Ballistic Mobility Model for QDD Simulation of Ultra-short Transistors", Proc. 2nd IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Kobe, Japan, Mar 13 - 16, 2018, pp. 77 - 79.
P. Aguirre, M. Rau, and A. Schenk, "2D and 3D TCAD Simulation of III-V Channel FETs at the End of Scaling", Proc. 4th Joint Int. EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Granada, Spain, March 19 - 21, 2018, doi:10.1109/ULIS.2018.8354744.
C. Convertino, H. Schmid, L. Czornomaz, H. Riel, S. Sant, A. Schenk, and K. Moselund, "Complementary III-V Heterojunction Tunnel FETs Monolithically Integrated on Silicon", ECS Transactions 85 (6), 139 - 150, 2018, doi: 10.1149/08506.0139ecst.
S. Sant, P. Aguirre, H. Hahn, V. Deshpande, L. Czornomaz, and A. Schenk, "Impact of Floating Body Effect, Back-Gate Traps, and Trap-Assisted Tunneling on Scaled In_0.53Ga_0.47As Ultrathin-Body MOSFETs and Mitigation Measures", IEEE Trans. Electron Devices 65 (6), 2578 - 2584, 2018, doi: 10.1109/TED.2018.2824021.
Kantawong Vuttivorakulchai, Mathieu Luisier, and Andreas Schenk, "Effect of Electron-phonon Scattering on the Thermal Conductivity of Si Nanowires", Proc. 48th European Solid-State Device Research Conference (ESSDERC), Dresden, Germany, Sep. 04-06, 2018, pp. 34 - 37.
S. Sant, A. Schenk, B. Mayer, S. Wirths, S. Mauthe, H. Schmid, and K. E. Moselund, "Modeling whispering gallery mode III-V micro-lasers monolithically integrated on Silicon" Proc. 18th Int. Conf. on Numerical Simulation of Optoelectronic Devices (NUSOD), Hong Kong, China, Nov. 05-09, 2018, pp. 79 - 80.
K. Vuttivorakulchai, M. Luisier, and A. Schenk, "Effect of stacking faults and surface roughness on the thermal conductivity of InAs nanowires", Journal of Applied Physics 124, 205101, (2018); doi: 10.1063/1.5051677.
Y. Xiang, D. Yakimets, S. Sant, E. Memisevic, M.G. Bardon, A.S. Verhulst, B. Parvais, A. Schenk, L.-E. Wernersson, and G. Groeseneken, "Trap-Aware Compact Modeling and Power-Performance Assessment of III-V Tunnel FET", IEEE S3S Conference, San Francisco, USA, Oct 15-18.
C. Convertino, C. Zota, S. Sant, F. Eltes, M. Sousa, D. Caimi, A. Schenk and L. Czornomaz, "InGaAs-on-Insulator FinFETs with Reduced Off-Current and Record Performance", IEDM Tech. Digest pp. 899 - 902 (2018).

2019
S. Sant, Q. Ding, M. Rau, M. Luisier, and A. Schenk, "Variability in the Characteristics of InGaAsSb/InAs Tunnel FETs Caused by Dopant-induced Traps", Proc. 3rd IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Singapore, Mar 12 - 15, 2019.
A. Schenk and P. Aguirre, "TCAD models of the ballistic mobility in the source-to-drain tunneling regime", Solid-State Electronics 157, pp. 1 - 11, 2019 (personal pre-print version, final version only available from SSE), doi:10.1016/j.sse.2019.03.065.
P. Aguirre, M. Rau, and A. Schenk, "2D and 3D TCAD simulation of III-V channel FETs at the end of scaling", Solid-State Electronics https://doi.org/10.1016/j.sse.2019.03.043 (personal pre-print version, final version only available from SSE).
P. Aguirre, M. Rau, and A. Schenk, "TCAD Analysis of Leakage Currents in the Ballistic Regime", 20th International Workshop on Computational Nanotechnology (IWCN 2019), Evanston, USA, Book of Abstracts, Posters, p.3, May 20-24, 2019.
K. Vuttivorakulchai, M. Luisier, and A. Schenk, "Effect of Stacking Faults and Surface Roughness on the Thermal Conductivity of Si Nanowires", 20th International Workshop on Computational Nanotechnology (IWCN 2019), Evanston, USA, Book of Abstracts, p.22, May 20-24, 2019.
Q. Ding, S. Sant, and A. Schenk, "Design Strategy for Monolithically Integrated Photodetector and Improvement using Plasmonics" Proc. 19th Int. Conf. on Numerical Simulation of Optoelectronic Devices (NUSOD), Ottawa, Canada, Jul. 08 - 12, 2019, pp. 155 - 156.
Kantawong Vuttivorakulchai, Mathieu Luisier, and Andreas Schenk, "Effect of Stacking Faults on the Thermoelectric Figure of Merit of Si Nanowires", Proc. 24th Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy, Sep. 4 - 6, 2019, pp. 231 - 234.

2020
Q. Ding, Y. Baumgartner, L. Czornomaz, and A. Schenk, "Impact of Interface Traps and Zn Diffusion on Performance of Lateral Hybrid III-V/Si Photodetectors", Proc. 4th IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Penang, Malaysia, Mar 16 - 18, 2020, pp. .
S. Mauthe, Y. Baumgartner, S. Sant, Q. Ding, M. Sousa, L. Czornomaz, A. Schenk, and K. E. Moselund, "Ultra-Thin III-V Photodetectors Epitaxially Integrated on Si with Bandwidth Exceeding 25 GHz", Optical Networking and Communication Conference & Exhibition (OFC), Moscone Center, San Francisco, California, USA, Mar. 28 - Apr. 1, 2020.
A. Schenk and S. Sant, "Tunneling between density-of-state tails: Theory and effect on Esaki diodes", J. Appl. Phys. vol. 128, 014502, 2020, doi:org/10.1063/5.0008709.
P. Tiwari, S. Mauthe, N. Vico Trivino, P. Staudinger, M. Scherrer, P. Wen, D. Caimi, M. Sousa, H. Schmid, Q. Ding, A. Schenk, and K. E. Moselund, "Scaled III-V optoelectronic devices on silicon", Proc. 20th Int. Conf. on Numerical Simulation of Optoelectronic Devices (NUSOD), Torino, Italy, Sep. 14 - 18, 2020, pp. 93-94. ___Slides of invited talk
Q. Ding, S. Sant, and A. Schenk, "Scaling Effects on the Plasmonic Enhancement of Butt-Coupled Waveguide Photodetectors", Proc. 20th Int. Conf. on Numerical Simulation of Optoelectronic Devices (NUSOD), Torino, Italy, Sep. 14 - 18, 2020, pp. 29-30.
Svenja Mauthe, Yannick Baumgartner, Marilyne Sousa, Qian Ding, Marta D. Rossell, Andreas Schenk, Lukas Czornomaz, and Kirsten E. Moselund, "High-speed III-V nanowire photodetector monolithically integrated on Si", Nature Communications 11, 4565 (2020) | https://doi.org/10.1038/s41467-020-18374-z | www.nature.com/naturecommunications
Svenja Mauthe, Yannick Baumgartner, Marilyne Sousa, Qian Ding, Marta D. Rossell, Andreas Schenk, Lukas Czornomaz, and Kirsten E. Moselund, "Supplementary Information: High-speed III-V nanowire photodetector monolithically integrated on Si", Nature Communications 11, 4565 (2020) | https://doi.org/10.1038/s41467-020-18374-z | www.nature.com/naturecommunications
Kuan-Ting Ho, Qian Ding, and Andreas Schenk, "Design of electrically pumped nanolaser with metal-dielectric-metal coaxial ring cavity", AIP Advances 10, 105005 (2020) | https://doi.org/10.1063/5.0023904

2021
Q. Ding, S. Sant, and A. Schenk, "Electrostatic impacts of plasmonic structure on the performance of monolithically integrated hybrid III-V/Si waveguide-coupled photodetectors", OSA Continuum, vol. 4 (3), 953-965, 2021 | https://doi.org/10.1364/OSAC.406277.
A. Schenk, "Finite-temperature full random-phase approximation of band gap narrowing in quasi-neutral regions: Theory including nonparabolicity and application to silicon and InGaAs", J. Appl. Phys. vol. 130 (1), 015703, 2021, doi:org/10.1063/5.0051055.
Q. Ding and A. Schenk, "Performance of Plasmonic Side-Coupled Waveguide Photodetector with Varying Schottky Barrier Height", Proc. 21th Int. Conf. on Numerical Simulation of Optoelectronic Devices (NUSOD), Sep. 13 - 17, 2021, pp. 33-34.

2022
Qian Ding, Pengyan Wen, Bernd Gotsmann, Kirsten E. Moselund, and Andreas Schenk, "Self-heating analysis of monolithically integrated hybrid III-V/Si PIN diode", SPIE Photonics Europe, Strasbourg, Vol. 12148, Apr. 5, 2022.
Qian Ding, Andreas V. Kuhlmann, Andreas Fuhrer, and Andreas Schenk, "A Generalizable TCAD Framework for Silicon FinFET Spin Qubit Devices with Electrical Control", Proc. 27th Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), Granada, Spain, Sep. 6 - 8, 2022, pp. - .
Qian Ding, Andreas V. Kuhlmann, Andreas Fuhrer, and Andreas Schenk, "A Generalizable TCAD Framework for Silicon FinFET Spin Qubit Devices with Electrical Control", Solid-State Electronics 200, 108550, 2022, https://doi.org/10.1016/j.sse.2022.108550.

2023
Qian Ding and Andreas Schenk, "Theoretical study of impacts of traps on optical response of side-coupled InGaAs waveguide photodetectors", Proc. SPIE 12415, Physics and Simulation of Optoelectronic Devices XXXI, 1241508 (10 March 2023); doi: 10.1117/12.2649950.
Qian Ding and Andreas Schenk, "Simulation of impacts of traps on the optical response of a butt-coupled InGaAs photodetector", Optica Quantum 2.0 Conference and Exhibition, Denver, Colorado, 18-22 June 2023; doi: .
Qian Ding, Andreas Schenk, and Mathieu Luisier, "TCAD-based Simulation of Hole Spin Qubits in 5-Gate Si FinFETs: Rabi Frequency and Charge Noise", NCCR SPIN Annual Meeting, Pontresina, 19-21 June 2023.
A. Schenk, "Band gap narrowing in zincblende III-V semiconductors: finite-temperature full random-phase approximation and general analytical model", AIP Advances 13, 070702, 2023, https://doi.org/10.1063/5.0149190.

Email: Andreas.Schenk@iis.ee.ethz.ch
WWW: http://www.nano-tcad.ethz.ch