The Physical Characterization Laboratory disposes on a variety of experimental techniques for supporting the design of devices, as well for calibrating and validating models used in device and process simulation.
- High-resolution techniques for the determination of 2D dopant profiles: Scanning Capacitance Microscopy
Current 1D techniques (e.g. Secondary Ion Mass Spectrometry or Spreading Resistance) are not able to address essential phenomena like Thermal Enhanced Diffusion. This implies that the development of 2D doping profiling techniques is mandatory. The Scanning Capacitance Microscopy (SCM) makes use of an Atomic Force Microscope for quantitative 2D carrier profiling with a lateral resolution in the nanometer range and a dynamic range of 1015 - 1020 atoms/cm3. The IIS is member of the European Training Network on High Resolution Electrical Characterization of ULSI and Advanced Semiconductor Devices (HERCULAS, RTN1-1999-0004). In this framework our Laboratory has developed the software package SCaMsim, which allows to simulate SCM spectra by applying the signal reconstruction technique to one- and two-dimensional SCM measurements. SCaMsim is a GNU-licensed software running on Unix, MacOS, and Windows systems and can be downloaded here free of charge.
- Robust Design of BiCMOS devices
Cost reduction and system miniaturization in novel mobile applications reduce the feasibility of external protection measures. Therefore, the performance of an integrated circuit will increasingly depend on the robustness of the device itself such that strategies as the design for robustness are getting vital. The implementation of these approaches requires the use of design tools optimized for the simulation of fast and high-energetic pulses with suitable boundary condtions. The IIS is a partner of the European IST-project An Integrated Design Methodology for Enhanced Device Robustness (DEMAND, IST-2000-30033) with the scope to develop new simulation tools for the integration of robust devices. In particular, new laser interferometry techniques will be used for performing time-resolved local temperature measurements within the device. The use of such an approach requires to validate simulation models for the Silicon up to 700°C.
- High-temperature Silicon power devices for traction applications
A more efficient use of the energy in railway and automotive systems can be obtained by increasing the efficiency of power semiconductors. Among other, this can be achieved by reducing the static and dynamic losses, by developing modules for higher operating temperatures, and by the optimization of the thermal management by the use of integrated modules. The IIS participates to the European GROWTH-project High-Temperature IGBT and MOSFET Modules for Railway Traction and Automotive Electronics (HIMRATE, GRD1-1999-10027). The main scopes of this project is develop:
- 70V MOSFET modules for starter generator applications in internal combustion motors enabling operating temperatures up to 200°C
- 600 V IGBT for hybrid vehicles enabling operating temperatures up to 190°C
- 3.3 kV IGBT modules for railway traction applications enabling operating temperatures up to 150°C
- Scanning Electron Microscopy (SE, BE, EDX, EBIC)
- Atomic Force Microscopy (topography, Scanning Capacitance)
- Electron Beam Probing and Testing
- Emission Microscopy
- Infrared Thermography
- Liquid Crystals Microthermography
- Hall Spectroscopy
- Deep Level Transient Spectroscopy
- Wafer-level Electrical Characterization (IV, CV, charge pumping, ...)
- Very High Temperature and Cryostatic facilities
- Chemical facilities
- Metallographic preparation facilities