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....Monte-Carlo Simulation
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....Semiconductor Devices
....Semiconductor Simulation
....Foundations of Nanoelectronics
....Solid State Electronics
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Lectures
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Halbleiter-Bauelemente: Physikalische Grundlagen und Simulation

Semiconductor Devices: Physical Principles and Simulation

EE/CS 7th Sem.

This course aims at the understanding of the principle physics of modern electronic semiconductor devices based on silicon, of the foundations in the physical modeling of transport and its numerical simulation. During the course also basic knowledge on quantum-mechanics, semiconductor physics and device physics is provided. The main topics are: transport models for semiconductor devices (quantum transport, Boltzmann equation, drift-diffusion model, hydrodynamic model), physical characterization of silicon (intrinsic properties, scattering processes), mobility of cold and hot carriers, recombination (Shockley-Read-Hall statistics, Auger recombination), impact ionization, metal-semiconductor contact, metal-insulator-semiconductor structure, and hetero junctions.

The exercises are focussed on the theory and the basic understanding of the operation of special devices, as single-electron transistor, resonant tunneling diode, pn-diode, bipolar transistor, and MOSFET. Numerical simulations of such devices are performed with an advanced simulation package. This enables to understand the physical effects by means of computer experiments.

Detailed information for the actual semester

Last change:  6 September 2005    Author:  Andreas Schenk